Published 1989
| Version v1
Book
Defects and defect processes
Description
The mechanisms of materials modification by ion beams exploit defects and defect processes. This paper surveys the principal point defects in ionic crystals and semiconductors and at their surfaces, and summarises their properties in relation to such mechanisms. 37 refs.; 7 figs
Additional details
Publishing Information
- Publisher
- Kluwer.
- Imprint Place
- Dordrecht (Netherlands)
- ISBN
- 0-7923-0035-1
- Imprint Title
- Materials modification by high-fluence ion beams
- Imprint Pagination
- 611 p.
- Journal Volume
- 155
- Series
- NATO ASI Series.;Series E: Applied Sciences.
- Journal Page Range
- p. 217-230.
Conference
- Title
- NATO Advanced Study Institute on materials modification by high-fluence ion beams.
- Dates
- 24 Aug - 4 Sep 1987.
- Place
- Viana do Castelo (Portugal).
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 20062308
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- HOLES; INTERSTITIALS; ION BEAMS; IONIC CRYSTALS; POINT DEFECTS; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SURFACES; VACANCIES
- Descriptors DEC
- BEAMS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALS; MATERIALS
Optional Information
- Notes
- Imprint:Includes author and subject indexes.