Published 1979
| Version v1
Book
Regrowth of Si and Ge under laser irradiation
Description
The effects of pulsed laser irradiation on amorphous layers of Si and Ge obtained via ion implantation are considered. Amorphous-polycrystalline, amorphous-single crystal and polycrystalline-single crystal transitions have been obtained. Residual disorder and mechanical damage are considered. (author)
Additional details
Publishing Information
- Publisher
- Institute of Physics.
- Imprint Place
- Bristol
- ISBN
- 0 85498 137 3
- Imprint Title
- Defects and radiation effects in semiconductors, 1978
- Journal Issue
- no. 46
- Series
- Institute of Physics Conference Series.
- Journal Page Range
- p. 454-459.
Conference
- Title
- International conference on defects and radiation effects in semiconductors.
- Dates
- 11 - 14 Sep 1978.
- Place
- Nice, France.
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 10492582
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- AMORPHOUS STATE; ANNEALING; CRYSTAL GROWTH; CRYSTALLIZATION; GERMANIUM; ION IMPLANTATION; LASER RADIATION; MONOCRYSTALS; PHASE TRANSFORMATIONS; PHYSICAL RADIATION EFFECTS; POLYCRYSTALS; PULSES; SILICON
- Descriptors DEC
- CRYSTALS; ELECTROMAGNETIC RADIATION; ELEMENTS; HEAT TREATMENTS; METALS; RADIATION EFFECTS; RADIATIONS; SEMIMETALS