Published April 1, 1990 | Version v1
Journal article

Effect of a static field on the stochastic layer of microwave-driven hydrogen

  • 1. Center for Statistical Mechanics, University of Texas at Austin, Austin, Texas 78712 (USA)

Description

We study the effect of a static field on the stochastic layer of microwave-driven hydrogen using two approaches. We use the Chirikov overlap criterion on the Hamiltonian to estimate the critical field strength required for global chaos. We then derive the whisker and standard maps for this system valid for arbitrary field strengths and use the standard map to obtain a second estimate for the onset of global chaos. The standard-map estimate agrees well with both strobe plots and the whisker map plots for this system. Throughout, we use parameter values typically found in experiments

Additional details

Publishing Information

Journal Title
Physical Review, A
Journal Volume
41
Journal Issue
7
Series
Phys. Rev., A.
Journal Page Range
3733-3739
ISSN
0556-2791
CODEN
PLRAA

INIS