Energy and angular dependences of silicon chemical sputtering in xenon difluoride

The influence of the magnitude of molecular flux of XeF2 on energy and angular dependences of the yield of chemical sputtering Y by Xe+ ions of a silicon film vacuum deposited on the quartz microweigh crystal is studied. As the flux is increased, one can observe smoothing of the energy dependence of Y due to the interconnection of the yield of chemical sputtering and the cocentration of fluoride atoms in the chemisorption layer. A decrease of Y with increasing α is caused by depletion of the chemisorption layer in fluorine atoms at the expense of knocking them by incident ions