Large-scale lithography for sub-500nm features

The interest in micro- and nanotechnologies has grown rapidly in the last years. The applications are versatile and different techniques found its way into several research domains as optics, electronics, magnetism, fluidics, etc. In all of these fields integration of more and more functions on steadily decreasing device dimensions lead to an increase in structural density and feature size. Expensive and slow processes utilizing projection steppers or e-beam direct writer equipment are used to fabricate nm features today. A high throughput and cost effective method adapted on a standard mask aligner will be demonstrated, making features of below 300nm available on wafer-level. We will demonstrate results of 4 different resists exposed on a DUV proximity aligner and plasma etched for optical and biological applications in the sub-300nm range