Published July 2008 | Version v1
Journal article

Effect of the stoichiometry on the electronic structure of the Ni(111)/α-Al2O3(0001) interface: a first-principles investigation

  • 1. Department of Physics, Center for Optoelectronics Materials and Devices, Zhejiang Sci-Tech University, Xiasha College Park, Hangzhou 310018 (China)
  • 2. Materials Science Research Group, Research Institute for Ubiquitous Energy Devices, National Institute of Advanced Industrial Science and Technology, 1-8-31, Midorigaoka, Ikeda, Osaka 563-8577 (Japan)

Description

In this paper first-principles calculations of Ni(111)/α-Al2O3(0001) interfaces have been performed, and are compared with the preceding results of the Cu (111)/α-Al2O3(0001) interface [2004 Phil. Mag. Lett. 84 425]. The Alterminated and O-terminated interfaces have quite different adhesion mechanisms, which are similar to the Cu(111)/α-Al2O3(0001) interface. For the O-terminated interface, the adhesion is caused by the strong O-2p/Ni-3d orbital hybridization and ionic interactions. On the other hand, the adhesion nature of the Al-terminated interface is the image-like electrostatic and Ni–Al hybridization interactions, the latter is substantial and cannot be neglected. Charge transfer occurs from Al2O3 to Ni, which is opposite to that in the O-terminated interface. The charge transfer direction for the Al-terminated and O-terminated Ni(111)/α-Al2O3(0001) interfaces is similar to that in the corresponding Cu(111)/α-Al2O3(0001) interface, but there exist the larger charge transfer quantity and consequent stronger adhesion nature, respectively. (condensed matter: structure, thermal and mechanical properties)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-1056/17/7/050

Additional details

Identifiers

Publishing Information

Journal Title
Chinese Physics. B
Journal Volume
17
Journal Issue
7
Journal Page Range
p. 2655-2661
ISSN
1674-1056

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