Published June 2019 | Version v1
Journal article

Magnetoresistive properties of a double magnetic molecule spin valve in different geometrical arrangements

  • 1. Faculty of Physics, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań (Poland)

Description

Spin-dependent transport through a spin valve consisting of two large-spin molecules, such as single molecular magnets, weakly coupled to external ferromagnetic electrodes is theoretically studied. The main focus is on the dependence of the tunneling current, its spin polarization, differential conductance and tunnel magnetoresistance on the arrangement of molecules embedded in the tunnel junction. These quantities are calculated by using the real-time diagrammatic technique in the lowest-order perturbation theory with respect to the coupling strength. When the molecules' geometry is parallel, both an enhanced as well as inverse tunnel magnetoresistance can develop depending on the molecule's occupation. On the other hand, if the two molecules form a serial geometry, a strong current-suppression occurs due to the Pauli spin blockade effect, resulting in negative differential conductance. In this transport regime we also find large tunnel magnetoresistance, which now exhibits strong asymmetry with respect to the bias voltage reversal. In addition, we show that an enhanced magnetoresistance and negative differential conductance can develop when a T-shaped molecular geometry is taken under consideration. These effects are explained by invoking particular occupation of molecular states and nonequilibrium spin accumulation that builds up in the case of the antiparallel magnetic configuration of the device.

Additional details

Identifiers

DOI
10.1016/j.jmmm.2019.02.041;
PII
S0304885318335662;

Publishing Information

Journal Title
Journal of Magnetism and Magnetic Materials
Journal Volume
480
Journal Page Range
p. 11-21
ISSN
0304-8853
CODEN
JMMMDC

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
55025320
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ASYMMETRY; ELECTRIC POTENTIAL; ELECTRODES; MAGNETORESISTANCE; MAGNETS; PERTURBATION THEORY; SPIN; SPIN ORIENTATION; TUNNEL EFFECT; TUNNEL JUNCTIONS
Descriptors DEC
ANGULAR MOMENTUM; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; EQUIPMENT; ORIENTATION; PARTICLE PROPERTIES; PHYSICAL PROPERTIES

Optional Information

Copyright
Copyright (c) 2019 Elsevier B.V. All rights reserved.