Published December 15, 2009
| Version v1
Journal article
Magnetic resonance spectroscopy of single centers in silicon quantum wells
- 1. Ioffe Physical-Technical Institute, 194021 St. Petersburg (Russian Federation)
Description
We present the new optically detected magnetic resonance (ODMR) technique which reveals single point defects in silicon quantum wells embedded in microcavities within frameworks of the excitonic normal-mode coupling (NMC) without the external cavity and the hf source.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.physb.2009.08.248Additional details
Identifiers
- DOI
- 10.1016/j.physb.2009.08.248;
- arXiv
- arXiv:0910.3864v1;
- PII
- S0921-4526(09)01028-X;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 404
- Journal Issue
- 23-24
- Journal Page Range
- p. 5144-5147
- ISSN
- 0921-4526
- CODEN
- PHYBE3
Conference
- Title
- 25. international conference on defects in semiconductors
- Dates
- 20-24 Jul 2009
- Place
- St. Petersburg (Russian Federation)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41089756
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CAVITIES; MAGNETIC RESONANCE; POINT DEFECTS; QUANTUM WELLS; SILICON; SPECTROSCOPY
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; NANOSTRUCTURES; RESONANCE; SEMIMETALS
Optional Information
- Copyright
- Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.