Radiation- and photoinduced processes in glass-like arsenic trisulfide and triselenide

Peculiarities of photo-structural transformations and results of gamma- and electron-radiation effect upon microhardness, optical absorption, IK and EPR spectra have been studied for glassy chalcogenide semiconductors (GCS). It has been shown that high-energy-radiation-induced changes in the GCS physical properties depend on radiation parameters, thermal conditions and the composition of the sample. Mechanisms of radiation-induced transformations (RIC) for glassy arsenic trisulfide and triselenide are discussed. The RIC is supposed to have been predetermined by the following correlated processes: destruction-polymerization, radiation defect formation, and impurity radiolysis. 77 refs.; 10 figs.; 2 tabs