Published 1993
| Version v1
Report
Open
Thermochemical data for CVD modeling from ab initio calculations
Creators
- 1. Sandia National Labs., Albuquerque, NM (United States)
- 2. Sandia National Labs., Livermore, CA (United States)
Description
Ab initio electronic-structure calculations are combined with empirical bond-additivity corrections to yield thermochemical properties of gas-phase molecules. A self-consistent set of heats of formation for molecules in the Si-H, Si-H-Cl, Si-H-F, Si-N-H and Si-N-H-F systems is presented, along with preliminary values for some Si-O-C-H species
Availability note (English)
MF available from INIS under the Report Number; Also available from OSTI as DE94005269; NTIS; US Govt. Printing Office Dep.Files
25036086.pdf
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Additional details
Publishing Information
- Imprint Pagination
- 9 p.
- Report number
- SAND--93-3842C
Conference
- Title
- Fall meeting of the Materials Research Society (MRS).
- Dates
- 29 Nov - 3 Dec 1993.
- Place
- Boston, MA (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 25036086
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHEMICAL VAPOR DEPOSITION; ELECTRONIC STRUCTURE; ENTROPY; FORMATION HEAT; SILICON COMPOUNDS
- Descriptors DEC
- CHEMICAL COATING; DEPOSITION; ENTHALPY; PHYSICAL PROPERTIES; REACTION HEAT; SURFACE COATING; THERMODYNAMIC PROPERTIES
Optional Information
- Contract/Grant/Project number
- Contract AC04-94AL85000; Contract F33615-89-C-5628
- Funding organization
- USDOE, Washington, DC (United States); Department of Defense, Washington, DC (United States).
- Secondary number(s)
- CONF-931108--39.