Published 1987
| Version v1
Book
High speed 1.3 μm InGaAsP buried crescent injection lasers with semi-insulating current confinement layer
- 1. Rockwell International Corp., Collins Transmission System Div., Dallas, TX 75207
Description
In this paper a hybrid growth technique has been used to fabricate high modulation bandwidth 1.3 μm InGaAsP buried crescent (BC) injection lasers. The technique involves a first growth of an Fe-doped semi-insulating (SI) InP current confinement layer by low pressure metal organic chemical vapor deposition (LPMOCVD) followed by a liquid phase epitaxy (LPE) regrowth. The lasers have room temperature threshold currents and differential quantum efficiencies ranging from 20 to 30 mA and 0.2 and 0.3 mW/mA/facet, respectively. A 3-dB modulation bandwidth of 5 GHz has been achieved
Additional details
Publishing Information
- Publisher
- Optical Society of America.
- Imprint Place
- Washington, DC (USA)
- Imprint Title
- Topical meeting on semiconductor lasers (Summaries)
- Journal Page Range
- p. 47-50.
Conference
- Title
- Southwest optics conference.
- Dates
- 9-13 Feb 1987.
- Place
- Albuquerque, NM (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 18089098
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHEMICAL VAPOR DEPOSITION; CRYSTAL DOPING; CRYSTAL GROWTH; EFFICIENCY; ELECTRIC CURRENTS; ELECTRICAL INSULATION; ENERGY CONVERSION; FABRICATION; FREQUENCY MODULATION; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; GHZ RANGE 01-100; HETEROJUNCTIONS; INDIUM ARSENIDES; INDIUM PHOSPHIDES; IRON; LAYERS; MATERIALS; SEMICONDUCTOR LASERS; SPECIFICATIONS
- Descriptors DEC
- AMPLIFIERS; ARSENIC COMPOUNDS; ARSENIDES; CHEMICAL COATING; CONVERSION; CURRENTS; DEPOSITION; ELEMENTS; EQUIPMENT; FREQUENCY RANGE; GALLIUM COMPOUNDS; GHZ RANGE; INDIUM COMPOUNDS; LASERS; METALS; MODULATION; PHOSPHIDES; PHOSPHORUS COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; SOLID STATE LASERS; SURFACE COATING; TRANSITION ELEMENTS