Published April 2004
| Version v1
Journal article
Structural and optical properties of Cd2GeSe4 thin films grown by thermal evaporation
Creators
- 1. Gyeongsang National University, Jinju (Korea, Republic of)
- 2. Dongguk University, Seoul (Korea, Republic of)
Description
Cd2GeSe4 films were grown by using conventional thermal vacuum evaporation. X-ray diffraction spectra showed that the Cd2GeSe4 thin films had a strong (113) preferred orientation. The crystal structure was hexagonal with lattice constants a = 7.405 A and c = 36.24 A. The optical energy band gap for Cd2GeSe4 film measured at room temperature was about 1.65 eV. The charged carrier dynamical behavior of Cd2GeSe4 film was investigated using the photoinduced discharge characteristics (PIDC). The calculated values of the electron mobility and carrier concentration were 17.3 cm2/Vs and 2 X1023/cm3, respectively.
Additional details
Publishing Information
- Journal Title
- Journal of the Korean Physical Society
- Journal Volume
- 44
- Journal Issue
- 4
- Series
- 20 refs, 5 figs
- Journal Page Range
- p. 875-878
- ISSN
- 0374-4884
INIS
- Country of Publication
- Korea, Republic of
- Country of Input or Organization
- Korea, Republic of
- INIS RN
- 41071436
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CADMIUM BASE ALLOYS; CARRIERS; CRYSTAL STRUCTURE; ELECTRON MOBILITY; EVAPORATION; INDIUM ALLOYS; OPTICAL PROPERTIES; THIN FILMS; ULTRAVIOLET SPECTROMETERS; XENON; X-RAY DIFFRACTION
- Descriptors DEC
- ALLOYS; CADMIUM ALLOYS; COHERENT SCATTERING; DIFFRACTION; ELEMENTS; FILMS; FLUIDS; GASES; MEASURING INSTRUMENTS; MOBILITY; NONMETALS; PARTICLE MOBILITY; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; RARE GASES; SCATTERING; SPECTROMETERS