Published January 7, 2010 | Version v1
Journal article

Lattice, magnetic and electronic transport behaviors of Ge-doped Mn3XC (X = Al, Zn, Ga)

  • 1. Center for Condensed Matter and Materials Physics, School of Science, Beijing University of Aeronautics and Astronautics, Beijing 100083 (China)

Description

The lattice, magnetic, and electronic transport properties of Mn3X1-yGeyC (X = Al, Zn, and Ga; y = 0, 0.5) were investigated. Ge-doping does not change the antiperovskite structure, and only decreases the lattice constant in different degree. For all Mn3X1-yGeyC, Ge-doping makes the magnetic transition temperature decrease. The total behavior of Mn3AlxGe1-xC in temperature dependence of resistivity is metallic. For Mn3GaxGe1-xC, since the carrier densities in the ferromagnetic phase and antiferromagnetic one are different, with decreasing the temperature, the resistivity appears an abrupt increase.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.jallcom.2009.09.075

Additional details

Identifiers

DOI
10.1016/j.jallcom.2009.09.075;
PII
S0925-8388(09)01819-2;

Publishing Information

Journal Title
Journal of Alloys and Compounds
Journal Volume
489
Journal Issue
1
Journal Page Range
p. 289-292
ISSN
0925-8388
CODEN
JALCEU

Optional Information

Copyright
Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.