Growth of single crystals of mercuric iodide (HgI2) in spacelab III
Description
Continued development of a system designed to grow crystals by physical vapor transport in the environment of Spacelab III will be described, with special emphasis on simulation of expected space conditions, adjustment of crystal growth parameters, and on board observation and control of the experiment by crew members and ground personnel. A critical factor in the use of mercuric iodide for semiconductor detectors of x-rays and gamma-rays is the crystalline quality of the material. The twofold purpose of the Spacelab III experiment is therefore to grow single crystals with superior electronic properties as an indirect result of the greatly reduced gravity field during the growth, and to obtain data which will lead to improved understanding of the vapor transport mechanism. The experiments planned to evaluate the space crystals, including gamma-ray diffractometry and measurements of stoichiometry, lattice dimensions, mechanical strength, luminescense, and detector performance are discussed
Availability note (English)
MF available from INIS under the Report Number; Available from NTIS., PC A02/MF A01 as DE82016695.Files
14727425.pdf
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Additional details
Publishing Information
- Imprint Pagination
- 6 p.
- Report number
- CONF-811122--50
Conference
- Title
- Annual meeting of the Materials Research Society.
- Dates
- 16 - 19 Nov 1981.
- Place
- Boston, MA (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 14727425
- Subject category
- S36: MATERIALS SCIENCE; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CRYSTAL GROWTH; HGI2 SEMICONDUCTOR DETECTORS; MERCURY IODIDES; MONOCRYSTALS; SPACE FLIGHT; SPACE VEHICLES; VAPOR PLATING
- Descriptors DEC
- CRYSTALS; DEPOSITION; HALIDES; HALOGEN COMPOUNDS; IODIDES; IODINE COMPOUNDS; MEASURING INSTRUMENTS; MERCURY COMPOUNDS; PLATING; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SURFACE COATING