Published 1979 | Version v1
Journal article Metadata-only

Some problems of silicon oxidation in plasma

Creators

  • 1. Ceske Vysoke Uceni Technicke, Prague (Czechoslovakia). Fakulta Jaderna a Fysikalne Inzenyrska
  • 2. Ceskoslovenska Akademie Ved, Prague. Ustav Fyziky Plazmatu

Description

Novel findings are reported concerning the oxidation of silicon substrates in a microwave-excited oxygen plasma. The description is presented of equipment for oxidation in the wide oxygen pressure range of 5x10-5 to 1 torr which uses a magnetic field whose intensity approaches electron cyclotron resonance (ECR). Some of the results obtained are shown. Using the knowledge of the oxidation of silicon in a plasma, a probable model is developed of the mechanism of the oxide layer growth as is a model of bonds in the silicon/oxide system. (author)

Additional details

Additional titles

Original title (Czech)
Nektere otazky oxidace kremiku v plazmatu

Publishing Information

Journal Title
Acta Polytech. IV (Prague)
Journal Issue
no.3
Series
Acta Polytech. IV (Prague).
ISSN
0554-9205

INIS

Country of Publication
Czech Republic
Country of Input or Organization
Serbia and Montenegro
INIS RN
12614858
Subject category
S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
Descriptors DEI
MAGNETIC FIELDS; MAGNETRONS; MEDIUM VACUUM; OXIDATION; PLASMA; PRESSURE DEPENDENCE; SILICON; SILICON OXIDES
Descriptors DEC
CHALCOGENIDES; CHEMICAL REACTIONS; ELECTRON TUBES; ELECTRONIC EQUIPMENT; ELEMENTS; MICROWAVE EQUIPMENT; MICROWAVE TUBES; OXIDES; OXYGEN COMPOUNDS; SEMIMETALS; SILICON COMPOUNDS