Published 1987 | Version v1
Miscellaneous Metadata-only

Mass and energy dependence of implanted ion profiles in the AZ111 photoresist

Creators

  • 1. Universidade Federal Fluminense, Niteroi (Brazil)
  • 2. Rio Grande do Sul Univ., Porto Alegre (Brazil)

Description

Published in summary form only

Additional details

Publishing Information

Imprint Title
Progress Report 1985-1986
Imprint Pagination
180 p.
Journal Page Range
p. 19.
Report number
INIS-BR--1229

INIS

Country of Publication
Brazil
Country of Input or Organization
Brazil
INIS RN
19080247
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Progress Report, No Abstract
Descriptors DEI
ENERGY DEPENDENCE; ION BEAMS; ION IMPLANTATION; MASS; PHOTORESISTORS; PROGRESS REPORT; RANGE
Descriptors DEC
BEAMS; ELECTRICAL EQUIPMENT; EQUIPMENT; RESISTORS