Published 1975
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Scattering of thermal phonons in P doped Si
Description
The thermal conductivity of P-doped Si was investigated in the concentration range 2.5x1014 to 1018cm-3. It is shown that, in the low concentration region, the phonon scattering by isolated donors is weak and a theory can fairly explain the experimental data, while in the concentration region higher to 4.7x1017cm-3, the thermal resistance becomes larger than that predicted by the theory
Availability note (English)
MF available from INIS under the Report Number.Abstract (French)
La conductibilite thermique du silicium dope au phosphore dans le domaine de concentration 2,5 10-14-1018cm-3 a ete etudiee. On montre que, dans la region des faibles concentrations, la diffusion des phonons par des donneurs isoles est faible et une theorie explique bien les donnees experimentales, tandis que dans la region des concentrations depassant 4,7 1017cm-3, la resistance thermique devient plus importante que celle prevue par la theorieFiles
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Additional details
Publishing Information
- Imprint Pagination
- 3 p.
- Report number
- CEA-CONF--3318
Conference
- Title
- 2. International conference on phonon scattering in solids.
- Dates
- 27 Aug 1975.
- Place
- Nottingham, UK.
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 7245425
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- DOPED MATERIALS; PHONONS; PHOSPHORUS ADDITIONS; SILICON; THERMAL CONDUCTIVITY
- Descriptors DEC
- ELEMENTS; PHYSICAL PROPERTIES; QUASI PARTICLES; SEMIMETALS; THERMODYNAMIC PROPERTIES