Surface plasmon enhanced photoluminescence in amorphous silicon carbide films by adjusting Ag island film sizes
- 1. College of Physics Science and Technology, Hebei University, Baoding 071002 (China)
Description
Ag island films with different sizes are deposited on hydrogenated amorphous silicon carbide (α-SiC:H) films, and the influences of Ag island films on the optical properties of the α-SiC:H films are investigated. Atomic force microscope images show that Ag nanoislands are formed after Ag coating, and the size of the Ag islands increases with increasing Ag deposition time. The extinction spectra indicate that two resonance absorption peaks which correspond to out-of-plane and in-plane surface plasmon modes of the Ag island films are obtained, and the resonance peak shifts toward longer wavelength with increasing Ag island size. The photoluminescence (PL) enhancement or quenching depends on the size of Ag islands, and PL enhancement by 1.6 times on the main PL band is obtained when the sputtering time is 10 min. Analyses show that the influence of surface plasmons on the PL of α-SiC:H is determined by the competition between the scattering and absorption of Ag islands, and PL enhancement is obtained when scattering is the main interaction between the Ag islands and incident light. (condensed matter: electronic structure, electrical, magnetic, and optical properties)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-1056/22/5/057804Additional details
Identifiers
Publishing Information
- Journal Title
- Chinese Physics. B
- Journal Volume
- 22
- Journal Issue
- 5
- Journal Page Range
- [4 p.]
- ISSN
- 1674-1056
INIS
- Country of Publication
- China
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45032060
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- AMORPHOUS STATE; ATOMIC FORCE MICROSCOPY; DEPOSITION; ELECTRONIC STRUCTURE; EMISSION SPECTRA; HYDROGENATION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PLASMONS; QUENCHING; RESONANCE ABSORPTION; SILICON CARBIDES; SILVER; SPUTTERING; SURFACES; THIN FILMS; VISIBLE RADIATION
- Descriptors DEC
- ABSORPTION; CARBIDES; CARBON COMPOUNDS; CHEMICAL REACTIONS; ELECTROMAGNETIC RADIATION; ELEMENTS; EMISSION; FILMS; LUMINESCENCE; METALS; MICROSCOPY; PHOTON EMISSION; PHYSICAL PROPERTIES; QUASI PARTICLES; RADIATIONS; SILICON COMPOUNDS; SORPTION; SPECTRA; TRANSITION ELEMENTS