Formation of the ohmic contact to diamond by ion implantation

The influence of technological parameters of ion doping for formation of ohmic contacts to diamond of a p-type to value of specific resistance of a contact was investigated. The structure of a contact of a type metal - p+ (contact area) -p (active area) was investigated. The threshold level of doping of contact area appropriate to concentration 5*1020 cm-3, ensuring resistance of a contact less than 10-5 Ω * cm2 is determined. Is determined, that the given level of concentration corresponds to model of field issue. The influence of a level of concentration and mobility in active area on size of resistance of an ohmic contact is investigated. Is determined, that for mobility in active area more than 47 sm2 / (V * s) the model thermionic emission is applied, in this cause the resistance of a contact for concentration of active area over significance 1018 sm-3 does not depend from last. Pursuant to the developed process the significances of specific contact resistance on diamond 2*10-6 Ω * cm2 are reached