Published July 1976
| Version v1
Journal article
Electroluminescence spectra of p-GaSb-n-Gasub(1-x)Insub(x)Sb heterojunctions
- 1. AN SSSR, Moscow. Inst. Metallurgii
- 2. Moskovskij Gosudarstvennyj Univ. (USSR)
Description
Electroluminescence spectra of heterojunctions p-GaSb-n-Gasub(1-x)Insub(x)Sb are studied in the range of compositions 0 < x < 0.2 depending on the current density j and temperature T. The position of maximum in the radiation spectrum at high current densities (j approximately 103 A/cm2) is in agreement with values of the forbidden band width Esub(g)(x,T). At 78 K moving spectral bands were observed in the range of 1.7 - 2.5 μm, which may be explained by models of diagonal tunneling and filling up tails of state density in a solid solution. Narrowing spectrum from 100 to 40 meV was also observed with increasing current due to filling up the tails
Additional details
Additional titles
- Original title (Russian)
- Спектры электролюминесценции гетеропереходов п-GaSb-н-Гасуб(1-x)Инсуб(x)Сб
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Volume
- 10
- Journal Issue
- 7
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 1304-1307
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 9348811
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANTIMONY ALLOYS; COMPARATIVE EVALUATIONS; CURRENT DENSITY; ELECTROLUMINESCENCE; ENERGY GAP; GALLIUM ALLOYS; INDIUM ALLOYS; LOW TEMPERATURE; NEAR INFRARED RADIATION; QUANTITY RATIO; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SPECTRA; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ALLOYS; ELECTROMAGNETIC RADIATION; INFRARED RADIATION; LUMINESCENCE; RADIATIONS; SEMICONDUCTOR DEVICES
Optional Information
- Notes
- For English translation see the journal Sov. Phys. - Semicond.