Published December 8, 2004
| Version v1
Journal article
Numerical Simulations of Stress Relaxation by Interface Diffusion in Patterned Copper Lines
- 1. Division of Engineering, Brown University, Providence RI 02912 (United States)
- 2. Laboratory for Interconnect and Packaging, University of Texas, Austin, TX 78712-1063 (United States)
- 3. Logic Technology Development, Intel Corporation, 5200 N.E. Elam Young Parkway, Hillsboro, OR 97214 (United States)
Description
Three-dimensional finite element simulations were used to model stress relaxation due to diffusion along interfaces in a damascene copper interconnect structure. By fitting the predicted stress relaxation rates to the available experimental results, we have identified the interfaces that contribute to stress relaxation in the structure, and have estimated values for their diffusion coefficients
Additional details
Identifiers
- DOI
- 10.1063/1.1845837;
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 741
- Journal Issue
- 1
- Journal Page Range
- p. 62-69
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- 7. international workshop on stress-induced phenomena in metallization
- Dates
- 14-16 Jun 2004
- Place
- Austin, TX (United States)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36073316
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- COMPUTERIZED SIMULATION; COPPER; DIFFUSION; FINITE ELEMENT METHOD; INTEGRATED CIRCUITS; INTERFACES; STRESS RELAXATION; THREE-DIMENSIONAL CALCULATIONS
- Descriptors DEC
- CALCULATION METHODS; ELECTRONIC CIRCUITS; ELEMENTS; MATHEMATICAL SOLUTIONS; METALS; MICROELECTRONIC CIRCUITS; NUMERICAL SOLUTION; RELAXATION; SIMULATION; TRANSITION ELEMENTS
Optional Information
- Notes
- (c) 2004 American Institute of Physics