Published 2005
| Version v1
Miscellaneous
Effects of As/P exchange on InAs/lnP (100) quantum dots formation by metalorganic chemical vapor Deposition
Creators
- 1. The Australian National University, ACT (Australia). Research School of Physical Sciences and Engineering, Department of Electronic Materials Engineering
Description
Full text: Self-assembled InAs/lnP quantum dots (QDs) are very promising active materials for QD lasers and semiconductor amplifiers for optical fiber communications (1.3-1.55 mm). However the main challenge associated with this material system is the As/P exchange reaction which degrades the structural and optical properties of the QDs. In this talk, we will show the effect of growing a thin spacer layer of GaAs or InGaAs prior to the deposition of the InAs QDs by metalorganic chemical vapor deposition. Not only the effect of As/P exchange is suppressed or minimized but the bandgap of the QDs could be tuned too. Copyright (2005) Australian Institute of Physics
Additional details
Identifiers
Publishing Information
- Imprint Title
- 16th National Congress of the Australian Institute of Physics. Congress Proceedings Handbook and Abstracts
- Imprint Pagination
- 268 p.
- Journal Page Range
- p. 165
Conference
- Title
- 16. National Congress of the Australian Institute of Physics. Physics for the Nation
- Dates
- 30 Jan - 4 Feb 2005
- Place
- Canberra, ACT (Australia)
INIS
- Country of Publication
- Australia
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37101704
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, Non-conventional Literature
- Descriptors DEI
- AMPLIFIERS; CHEMICAL VAPOR DEPOSITION; DATA TRANSMISSION; GALLIUM ARSENIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; INTERFACES; LASERS; LAYERS; OPTICAL FIBERS; OPTICAL PROPERTIES; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; SPACERS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CHEMICAL COATING; COMMUNICATIONS; DEPOSITION; ELECTRONIC EQUIPMENT; EQUIPMENT; FIBERS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MATERIALS; NANOSTRUCTURES; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SURFACE COATING