The influence of in situ photoexcitation on a defect structure generation in Ar+ implanted GaAs(001) crystals revealed by high-resolution x-ray diffraction and Rutherford backscattering spectroscopy
Creators
- 1. Moscow State Institute of Steel and Alloys, Russian Federation, Moscow, Leninskii Prospekt, 4 (Russian Federation)
- 2. Institute of Microelectronics Technology and High Purity Materials, 142432 Chemogolovka (Russian Federation)
- 3. Instituto Tecnologico e Nuclear (ITN), Estrada Nacional 10, 2686-953 Sacavem (Portugal)
Description
The influence of in situ photoexcitation on the defect structure generation in GaAs crystals implanted by Ar+ ions with energy of 200 keV and doses of 1x1013, 3x1013 and 5x1013 cm-2 was studied by high-resolution x-ray diffraction and Rutherford backscattering spectroscopy. The in situ photoexcitation is found to provide for annihilation of Frenkel pairs that decrease a residual concentration of radiation-induced point defects. The amorphization of the damaged layer is assumed to proceed by a generation and a growth of radiation-induced point defect clusters. The vacancy- and interstitial-type clusters are spatially separated: the former are located closer to the surface than the latter ones. The in situ photoexcitation is shown to hinder the cluster growth and to stimulate diffusion of interstitials towards undamaged substrate
Availability note (English)
Available online at http://stacks.iop.org/0022-3727/36/A143/d310a29.pdf or at the Web site for the Journal of Physics. D, Applied Physics (ISSN 1361-6463) http://www.iop.org/Additional details
Identifiers
- URL
- http://stacks.iop.org/0022-3727/36/A143/d310a29.pdf; http://www.iop.org/;
- DOI
- 10.1088/0022-3727/36/10A/329;
- PII
- S0022-3727(03)60715-1;
Publishing Information
- Journal Title
- Journal of Physics. D, Applied Physics
- Journal Volume
- 36
- Journal Issue
- 10A
- Journal Page Range
- p. A143-A147
- ISSN
- 0022-3727
- CODEN
- JPAPBE
Conference
- Title
- 7. international conference on x-ray imaging and high resolution diffraction
- Acronym
- X-TOP 2002
- Dates
- 10-14 Sep 2002
- Place
- Grenoble (France)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 34049990
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ARGON IONS; CRYSTAL DOPING; EXCITATION; FRENKEL DEFECTS; GALLIUM ARSENIDES; INTERSTITIALS; ION BEAMS; ION IMPLANTATION; KEV RANGE 100-1000; PHYSICAL RADIATION EFFECTS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SPATIAL RESOLUTION; VACANCIES; X-RAY DIFFRACTION
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CHARGED PARTICLES; COHERENT SCATTERING; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIFFRACTION; ENERGY RANGE; ENERGY-LEVEL TRANSITIONS; GALLIUM COMPOUNDS; IONS; KEV RANGE; PNICTIDES; POINT DEFECTS; RADIATION EFFECTS; RESOLUTION; SCATTERING; SPECTROSCOPY; VACANCIES