Published September 2003 | Version v1
Journal article Metadata-only

Influence of defects on the formation of thin porous GaP(001) films

Creators

  • 1. Natural Science Center, Institute of General Physics, Russian Academy of Sciences, ul. Vavilova 38, Moscow, 119991 (Russian Federation)
  • 2. Shubnikov Institute of Crystallography, Russian Academy of Sciences, Leninskii pr. 59, Moscow, 119333 (Russian Federation)
  • 3. Lebedev Institute of Physics, Russian Academy of Sciences, Leninskii pr. 53, Moscow, 119991 (Russian Federation)

Description

The results are presented of the optical and X-ray studies of the structure of n-type subsurface GaP(001) layers implanted with 300 keV-He+- (D = 1016 at./cm2) and 600 keV-Xe2+-ions He+- (D = 1012 at./cm2) and then subjected to electrochemical anodizing in aqueous 0.25 M H+ solution. It is shown that defects formed in the crystal lattice as a result of this treatment considerably influence the character of electrochemical etching and the structural parameters of the formed layers. It is shown that anodic etching proceeds over the defects, which allows one to obtain oriented systems of pores by choosing the appropriate conditions of preliminary implantation

Additional details

Identifiers

DOI
10.1134/1.1612605;

Publishing Information

Journal Title
Crystallography Reports
Journal Volume
48
Journal Issue
5
Journal Page Range
p. 851-859
ISSN
1063-7745
CODEN
CYSTE3

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
35094462
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Translation
Descriptors DEI
CRYSTAL DEFECTS; CRYSTAL LATTICES; CRYSTALLOGRAPHY; ETCHING; GALLIUM PHOSPHIDES; HELIUM IONS; HYDROGEN IONS 1 PLUS; ION BEAMS; ION IMPLANTATION; KEV RANGE 100-1000; LAYERS; SOLUTIONS; SYNTHESIS; THIN FILMS; X RADIATION; XENON IONS
Descriptors DEC
BEAMS; CATIONS; CHARGED PARTICLES; CRYSTAL STRUCTURE; DISPERSIONS; ELECTROMAGNETIC RADIATION; ENERGY RANGE; FILMS; GALLIUM COMPOUNDS; HOMOGENEOUS MIXTURES; HYDROGEN IONS; IONIZING RADIATIONS; IONS; KEV RANGE; MIXTURES; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; RADIATIONS; SURFACE FINISHING

Optional Information

Notes
Translated from Kristallografiya, ISSN 0023-4761, 48, 912-920 (No. 5, 2003); (c) 2003 MAIK ''Nauka / Interperiodica''.