Published June 15, 1978 | Version v1
Journal article Metadata-only

Unidirectional contraction in boron-implanted laser-annealed silicon

Creators

  • 1. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830

Description

The lattice contraction in boron-implanted laser-annealed silicon has been studied by x-ray Bragg reflection profiles and ion channeling. The contraction was shown to be one dimensional, along the surface normal, for strains as large as 1.3%

Additional details

Identifiers

DOI
10.1063/1.89936;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
32
Journal Issue
12
Series
Appl. Phys. Lett.
Journal Page Range
801-803
ISSN
0003-6951

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
9407696
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANNEALING; BORON IONS; BORON 11; CONTRACTION; CRYSTAL LATTICES; DEPTH DOSE DISTRIBUTIONS; ION CHANNELING; ION IMPLANTATION; KEV RANGE 10-100; LASER RADIATION; PHYSICAL RADIATION EFFECTS; SILICON; STRAINS; X-RAY DIFFRACTION
Descriptors DEC
ATOMIC IONS; BORON ISOTOPES; CHANNELING; CHARGED PARTICLES; COHERENT SCATTERING; CRYSTAL STRUCTURE; DIFFRACTION; ELECTROMAGNETIC RADIATION; ELEMENTS; ENERGY RANGE; HEAT TREATMENTS; IONS; ISOTOPES; KEV RANGE; LIGHT NUCLEI; NUCLEI; ODD-EVEN NUCLEI; RADIATION DOSE DISTRIBUTIONS; RADIATION EFFECTS; RADIATIONS; SCATTERING; SEMIMETALS; SPATIAL DOSE DISTRIBUTIONS; STABLE ISOTOPES

Optional Information

Notes
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