Published 1996
| Version v1
Book
Variable low energy positron beam study of Ar-ion induced damage in Si
- 1. Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam (India)
Description
The ion-induced damage and its effects on amorphization in Si using low energy positron beam (LEPB), which is depth-selective and sensitive to defects have been studied. A Si(100) single crystal of 500 μ thickness has been implanted with 140 keV Ar+ ions over a dose range from 5 x 1014 to 5 x 1016 ions/cm2 at room temperature using 150 keV ion implanter
Additional details
Publishing Information
- Publisher
- Department of Atomic Energy.
- Imprint Place
- Mumbai (India)
- Imprint Title
- Proceedings of the DAE solid state physics symposium. V. 39C
- Imprint Pagination
- 497 p.
- Journal Page Range
- p. 150.
Conference
- Title
- 39. DAE solid state physics symposium.
- Dates
- 27-31 Dec 1996.
- Place
- Mumbai (India).
INIS
- Country of Publication
- India
- Country of Input or Organization
- India
- INIS RN
- 29012777
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ARGON IONS; CRYSTAL DEFECTS; DOPPLER BROADENING; ION IMPLANTATION; MONOCRYSTALS; POSITRON BEAMS; SILICON
- Descriptors DEC
- BEAMS; CHARGED PARTICLES; CRYSTAL STRUCTURE; CRYSTALS; ELEMENTS; IONS; LEPTON BEAMS; LINE BROADENING; PARTICLE BEAMS; SEMIMETALS
Optional Information
- Notes
- 4 refs., 1 fig.