Research of the real structure of the diode with barrier Schottky Al-pCdTe

In the paper the intermediate layer in structure Al-pCdTe is investigated. The Roentgen phase analysis and the photoelectric method have shown that the structure of intermediate layer between Al and pCdTe is complicated enough. There are three α-, β-, γ-modifications of Al2O3 and a thin layer of composite material (C60)1-x(CdTe)x (x ≥0.5) in the structure. The total thickness of the intermediate layer is no more than ∼180 A0, according to capacitive measurements and X-ray analysis of structure. It is shown that a base material in structure Al-pCdTe, basically, consists from homogeneous CdTe cubic modification, and also there are traces of hexagonal modification of the cadmium telluride. (authors)