Published February 2021
| Version v1
Journal article
Selective loss tailoring of broad-area diode lasers
Creators
- 1. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun (China)
Description
High-power high-brightness broad-area diode lasers have poor lateral beam quality, which has limited the application range of this kind of device. To improve the lateral beam quality, a sawtooth microstructure laser was proposed and the microstructures were carefully designed according to the profiles of each lateral mode and their dependence on the self-heating induced thermal lens effect. As a result of selective mode loss adjustment, a 42% improvement in lateral beam quality was achieved under the power-maintained condition. This technology enables us to develop high-brightness direct-diode laser systems. (author)
Availability note (English)
Available from DOI: https://doi.org/10.35848/1347-4065/abd70cAdditional details
Identifiers
Publishing Information
- Journal Title
- Japanese Journal of Applied Physics (Online)
- Journal Volume
- 60
- Journal Issue
- 2
- Journal Page Range
- p. 020901.1-020901.5
- ISSN
- 1347-4065
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 52110260
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BEAM CURRENTS; BEAM OPTICS; BEAM PRODUCTION; BRAGG REFLECTION; BRIGHTNESS; EPITAXY; ION IMPLANTATION; LASER RADIATION; MICROSTRUCTURE; MODE CONTROL; PROTONS; SEMICONDUCTOR LASERS; THERAPEUTIC USES
- Descriptors DEC
- BARYONS; CONTROL; CRYSTAL GROWTH METHODS; CURRENTS; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; FERMIONS; HADRONS; LASERS; NUCLEONS; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; RADIATIONS; REFLECTION; SEMICONDUCTOR DEVICES; SOLID STATE LASERS; USES
Optional Information
- Notes
- 30 refs., 5 figs.