Published May 2010
| Version v1
Journal article
Interference effects in negative luminescence and thermal radiation of planar semiconductor structures
- 1. V. Lashkaryov Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine, 41 Nauky Prospect, Kyiv 03028 (Ukraine)
Description
We investigated the spectral and angular characteristics of negative luminescence of planar structures with an optically thin semiconductor layer. Sharp spectral peaks and lobe-like directivity diagrams at fixed wavelengths due to the resonator effect were observed. For such structures, it is shown that negative luminescence efficiency in the spectral peaks may be close to unity.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.jlumin.2009.12.016Additional details
Identifiers
- DOI
- 10.1016/j.jlumin.2009.12.016;
- PII
- S0022-2313(09)00618-8;
Publishing Information
- Journal Title
- Journal of Luminescence
- Journal Volume
- 130
- Journal Issue
- 5
- Journal Page Range
- p. 869-871
- ISSN
- 0022-2313
- CODEN
- JLUMA8
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41117119
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- EFFICIENCY; INTERFERENCE; LAYERS; LUMINESCENCE; RESONATORS; SEMICONDUCTOR MATERIALS; THERMAL RADIATION
- Descriptors DEC
- ELECTROMAGNETIC RADIATION; ELECTRONIC EQUIPMENT; EMISSION; EQUIPMENT; MATERIALS; PHOTON EMISSION; RADIATIONS
Optional Information
- Copyright
- Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.