Published May 2010 | Version v1
Journal article

Interference effects in negative luminescence and thermal radiation of planar semiconductor structures

  • 1. V. Lashkaryov Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine, 41 Nauky Prospect, Kyiv 03028 (Ukraine)

Description

We investigated the spectral and angular characteristics of negative luminescence of planar structures with an optically thin semiconductor layer. Sharp spectral peaks and lobe-like directivity diagrams at fixed wavelengths due to the resonator effect were observed. For such structures, it is shown that negative luminescence efficiency in the spectral peaks may be close to unity.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.jlumin.2009.12.016

Additional details

Identifiers

DOI
10.1016/j.jlumin.2009.12.016;
PII
S0022-2313(09)00618-8;

Publishing Information

Journal Title
Journal of Luminescence
Journal Volume
130
Journal Issue
5
Journal Page Range
p. 869-871
ISSN
0022-2313
CODEN
JLUMA8

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
41117119
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
EFFICIENCY; INTERFERENCE; LAYERS; LUMINESCENCE; RESONATORS; SEMICONDUCTOR MATERIALS; THERMAL RADIATION
Descriptors DEC
ELECTROMAGNETIC RADIATION; ELECTRONIC EQUIPMENT; EMISSION; EQUIPMENT; MATERIALS; PHOTON EMISSION; RADIATIONS

Optional Information

Copyright
Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.