Published December 1989
| Version v1
Journal article
Characterization of multiple-bit errors from single-ion tracks in integrated circuits
Creators
- 1. Jet Propulsion Lab., California Institute of Technology, Pasadena, CA (USA)
Description
The spread of charge induced by an ion track in an integrated circuit and its subsequent collection at sensitive nodal junctions can cause multiple-bit errors. The authors have experimentally and analytically investigated this phenomenon using a 256-Kbit dynamic random-access memory (DRAM). This study illustrates the effects of different charge-transport mechanisms. Two classes of ion-track multiple-bit error clusters have been identified
Additional details
Publishing Information
- Journal Title
- IEEE Transactions on Nuclear Science
- Journal Volume
- 36
- Journal Issue
- 6
- Series
- IEEE Trans. Nucl. Sci.
- Journal Page Range
- 2267-2274
- ISSN
- 0018-9499
- CODEN
- IETNA
Conference
- Title
- 26. annual conference on nuclear and space radiation effects.
- Dates
- 25-29 Jul 1989.
- Place
- Marco Island, FL (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 21059572
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S42: ENGINEERING;
- Resource subtype / Literary indicator
- Conference, Numerical Data
- Descriptors DEI
- ANALYTICAL SOLUTION; CHARGE TRANSPORT; EXPERIMENTAL DATA; INTEGRATED CIRCUITS; IONS; MEMORY DEVICES; RADIATION HARDENING; SEMICONDUCTOR JUNCTIONS
- Descriptors DEC
- CHARGED PARTICLES; DATA; ELECTRONIC CIRCUITS; HARDENING; INFORMATION; NUMERICAL DATA; PHYSICAL RADIATION EFFECTS; RADIATION EFFECTS
Optional Information
- Secondary number(s)
- CONF-890723--.