Nanometer-thick SGOI structures produced by Ge+ ion implantation of SiO2 films and subsequent hydrogen transfer of Si layers

Nanometer-thick silicon-germanium-on-insulator (SGOI) structures have been produced by the implantation of Ge+ ions into thermally grown SiO2 layer and subsequent hydrogen transfer of silicon film on the Ge+ ion implanted substrate. The intermediate nanometer-thick Ge layer has been formed as a result of the germanium atom segregation at the Si/SiO2 bonding interface during annealing at temperatures 800-1100 deg. S. From a thermodynamic analysis of Si/Ge/SiO2 system, it has been suggested that the growth of the epitaxial Ge layer is provided by the formation of a molten layer at the Si/SiO2 interface due to the Ge accumulation. The effect of germanium on the hole mobility in modulation-doped heterostructures grown over the 3-20 nm thick SGOI layers was studied. An increase in the Hall hole mobility in SGOI-based structures by a factor of 3-5 was obtained in comparison with that in respective Ge-free SOI structures.