Published April 28, 1986
| Version v1
Journal article
Electron irradiation-activated low-temperature annealing of phosphorus-implanted silicon
- 1. FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
Description
High-energy (0.2--0.8 MeV, roughly-equal1017 cm-2) electron irradiation-stimulated solid phase regrowth of phosphorus-implanted silicon layers has been observed in the temperature range 350--600 0C. The influence of electron irradiation on the annealing of an isolated damage layer and of a continuous amorphous layer is compared. An ionization effect is found to enhance annealing of trapping centers in the isolated damage region. In addition, a small enhancement of solid phase epitaxial regrowth of the continuous amorphous layer was found, attributed to an elastic displacement effect
Additional details
Publishing Information
- Journal Title
- Appl. Phys. Lett.
- Journal Volume
- 48
- Journal Issue
- 17
- Series
- Appl. Phys. Lett.
- Journal Page Range
- 1132-1134
- ISSN
- 0003-6951
- CODEN
- APPLA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 17077296
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Descriptors DEI
- AMORPHOUS STATE; ANNEALING; ELECTRON COLLISIONS; HIGH TEMPERATURE; ION IMPLANTATION; IONIZATION; PHYSICAL RADIATION EFFECTS; SILICON; TRAPPING
- Descriptors DEC
- COLLISIONS; ELEMENTS; HEAT TREATMENTS; RADIATION EFFECTS; SEMIMETALS