Published September 2008 | Version v1
Journal article Metadata-only

Calculation of the dose enhancement factor to W-Si and Ta-Si interface by EGSnrcMP

Creators

  • 1. College of Science, China Three Gorges Univ., Hubei, Yichang (China)
  • 2. College of Physics Science and Technique, Sichuan Univ., Chengdu (China)

Description

The dose would be enhanced in low Z material when X-ray enters the interface which is constructed with different materials. The mechanism of dose enhancement is introduced in this article, and the dose enhancement factors of W-Si, Ta-Si interface are calculated in the article. The calculated results demonstrate that there exists a stronger dose-enhancement in the Si side near the interface when the energy of X-ray is 30-200 keV. (authors)

Additional details

Publishing Information

Journal Title
Radiation Protection (Taiyuan)
Journal Volume
28
Journal Issue
5
Journal Page Range
p. 296-300
ISSN
1000-8187

INIS

Country of Publication
China
Country of Input or Organization
China
INIS RN
42016743
Subject category
S36: MATERIALS SCIENCE; S99: GENERAL AND MISCELLANEOUS;
Descriptors DEI
COMPUTER CALCULATIONS; COMPUTERIZED SIMULATION; E CODES; INTERFACES; KEV RANGE; MATERIALS; MONTE CARLO METHOD; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; SILICON; TANTALUM; TUNGSTATES; X RADIATION
Descriptors DEC
CALCULATION METHODS; COMPUTER CODES; DOSES; ELECTROMAGNETIC RADIATION; ELEMENTS; ENERGY RANGE; IONIZING RADIATIONS; METALS; OXYGEN COMPOUNDS; RADIATION EFFECTS; RADIATIONS; REFRACTORY METAL COMPOUNDS; REFRACTORY METALS; SEMIMETALS; SIMULATION; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS; TUNGSTEN COMPOUNDS

Optional Information

Notes
7 figs., 6 refs.