Published November 1998
| Version v1
Journal article
Orientation of graphitic planes during the bias-enhanced nucleation of diamond on silicon: An x-ray absorption near-edge study
- 1. Instituto de Ciencia de Materiales de Madrid, CSIC, 28049 Madrid (Spain)
- 2. Lawrence Livermore National Laboratory, Livermore, California 94551 (United States)
Description
The bias-enhanced nucleation of diamond on Si(100) is studied by angle-dependent x-ray absorption near-edge spectroscopy (XANES). During diamond nucleation, a graphitic phase is also detected. The angle dependence of the XANES signal shows that the graphitic basal planes are oriented perpendicular to the surface. Implications of this result on the mechanism of bias-enhanced nucleation are discussed.copyright 1998 American Institute of Physics
Additional details
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 73
- Journal Issue
- 20
- Journal Page Range
- p. 2911-2913
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 30006640
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ABSORPTION SPECTRA; ANGULAR DISTRIBUTION; DIAMONDS; NUCLEATION; ORIENTATION; SILICON; THIN FILMS; X-RAY SPECTROSCOPY
- Descriptors DEC
- CARBON; DISTRIBUTION; ELEMENTS; FILMS; MINERALS; NONMETALS; SEMIMETALS; SPECTRA; SPECTROSCOPY