Published November 2016 | Version v1
Journal article

Energy transfer phenomena and Judd-Ofelt analysis on Sm3+ ions in K2GdF5 crystal

  • 1. Thuyloi University, 175 Tay Son, Dong da Dist, Hanoi (Viet Nam)
  • 2. DuyTan University, K7/25 QuangTrung, Danang (Viet Nam)
  • 3. Graduate University of Science and Technology - VAST, 18 Hoang quoc Viet, Hanoi (Viet Nam)
  • 4. Kurnakov Institute of General and Inorganic Chemistry, Moscow (Russian Federation)
  • 5. Institute of Materials Science - VAST, 18 Hoang quoc Viet, Hanoi (Viet Nam)
  • 6. Department of Chemistry, Changwon National University, Changwon 641-773 (Korea, Republic of)

Description

The Raman, absorption, luminescence spectra and lifetimes curves of Sm3+-doped K2GdF5were measured. Based on the Judd-Ofelt analysis, the values of radiative transition probabilities, branching ratios, integrated emission cross-sections and radiative lifetimes of excited states of Sm3+ in K2GdF5 crystal were calculated. The migration of excitation energy between the Gd3+ ions and the trapping processes of Gd3+ excitation energy by Sm3+ and Tb3+ions in K2GdF5 crystal are reported. The role of the overlapping between the broad, allowed absorption bands of the RE3+ ions and the narrow absorption lines 6IJ and 6PJ of Gd3+ ions on the trapping rates of the RE3+ was discussed. The energy transfer between the Sm3+ ions was studied by the decay measurement, which has been fitted by Inokuti-Hirayama energy transfer model and revealed that electric dipole–quadrupole interaction is responsible for the energy transfer process in Sm3+ ions doped K2GdF5 crystal.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.jlumin.2016.06.051

Additional details

Identifiers

DOI
10.1016/j.jlumin.2016.06.051;
PII
S0022-2313(16)30114-4;

Publishing Information

Journal Title
Journal of Luminescence
Journal Volume
179
Journal Page Range
p. 93-99
ISSN
0022-2313
CODEN
JLUMA8

INIS

Optional Information

Copyright
Copyright (c) 2016 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.