Published February 1, 2017 | Version v1
Journal article

Researching the 915 nm high-power and high-brightness semiconductor laser single chip coupling module

  • 1. National Engineering Research Center for Optoelectronic, Devices Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

Description

Based on the high-speed development of the fiber laser in recent years, the development of researching 915 nm semiconductor laser as main pumping sources of the fiber laser is at a high speed. Because the beam quality of the laser diode is very poor, the 915 nm laser diode is generally based on optical fiber coupling module to output the laser. Using the beam-shaping and fiber-coupling technology to improve the quality of output beam light, we present a kind of high-power and high-brightness semiconductor laser module, which can output 13.22 W through the optical fiber. Based on 915 nm GaAs semiconductor laser diode which has output power of 13.91 W, we describe a thoroughly detailed procedure for reshaping the beam output from the semiconductor laser diode and coupling the beam into the optical fiber of which the core diameter is 105 μ m and the numerical aperture is 0.18. We get 13.22 W from the output fiber of the module at 14.5 A, the coupling efficiency of the whole module is 95.03% and the brightness is 1.5 MW/cm2 -str. The output power of the single chip semiconductor laser module achieves the advanced level in the domestic use. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-4926/38/2/024006

Additional details

Publishing Information

Journal Title
Journal of Semiconductors
Journal Volume
38
Journal Issue
2
Journal Page Range
[4 p.]
ISSN
1674-4926