Published January 11, 1975 | Version v1
Journal article Metadata-only

Effect of carrier lifetime on laser-induced damage in silicon

Creators

  • 1. Meijo Univ., Nagoya (Japan)

Description

An experimental study was made of the damage to p-type Si crystals whose carrier lifetime has been reduced by neutron and gamma irradiation. No correlation between the carrier lifetime and the damage threshold was found in our experiment.

Additional details

Identifiers

DOI
10.1088/0022-3727/8/1/001;

Publishing Information

Journal Title
Journal of Physics D: Applied Physics
Journal Volume
8
Journal Issue
1
Series
J. Phys., D (London).
Journal Page Range
L1-L2
ISSN
0022-3727

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
6180438
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
No Abstract
Descriptors DEI
CARRIER LIFETIME; GAMMA RADIATION; LASER RADIATION; MONOCRYSTALS; NEUTRONS; P-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; SILICON
Descriptors DEC
BARYONS; CRYSTALS; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; HADRONS; IONIZING RADIATIONS; LIFETIME; NUCLEONS; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR MATERIALS; SEMIMETALS

Optional Information

Notes
Letter to the editor.; Updated automatically by Metadata and Full-Text Enrichment Agent