Synthesis of solid solutions at electron pulse processing of Ge-Si structures

A study of synthesis of germanium-silicon solid solution at electron pulse irradiation of Ge-Si heterostructure is presented. 10 keV electrons have been used for pulse annealing. The depth distribution of Ge before and after pulse action was investigated by the backscattering technique. The results show that one may obtain crystalline layers of Gesub(x)Sisub(1-x) solid solution of 1 μm thickness in a wide range of x by using pulse electron beam annealing of Ge films deposited on Si substrates. The structure of the formed layers is perfect if the Ge content does not exceed 15%