Vertical semiconducting single-walled carbon nanotube Schottky diode

This paper presents a vertical semiconducting single-walled carbon nanotube (s-SWCNT)-based Schottky device. For the first time, the author successfully demonstrated a vertical s-SWCNT Schottky diode on an anodized aluminum oxide (AAO) template. In the vertical pores of an AAO template s-SWCNTs were vertically grown and aligned. The vertical growth of s-SWCNTs inside the pores was achieved by successfully isolating the catalyst at the bottom of the pores by using redeposition enabled angled ion milling. The ends of the grown s-SWCNTs were coated with palladium and titanium to form Schottky and Ohmic contacts, respectively. The I-V characteristics of the vertical s-SWCNT paths engaging the Schottky and Ohmic contacts well demonstrated Schottky diode rectification.