Published October 1, 2007
| Version v1
Journal article
Formation mechanisms of self-assembled ZnSe nanostructures on Cl-doped ZnSe thin films grown on (100) GaAs substrates
Creators
- 1. Department of Physics, Chungnam National University, Daejeon 305-764 (Korea, Republic of)
- 2. Department of Materials Science and Metallurgy, Kyungpook National University, Daegu 702-701 (Korea, Republic of)
- 3. Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of)
- 4. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701 (Korea, Republic of)
Description
Bright-field transmission electron microscopy images, high-resolution transmission electron microscopy images, energy dispersive spectroscopy profiles, and high-resolution x-ray diffraction curves showed that a high density of ZnSe nanostructures with a small size was formed on the Cl-doped ZnSe thin films grown on GaAs substrates. The formation of the ZnSe nanostructures was attributed to the strain energy resulting from the existence of the compressive strain generated by the accumulation of Cl impurities on the surface of the ZnSe thin film and from the residual strain existing in the ZnSe thin film with a thin thickness
Additional details
Identifiers
- DOI
- 10.1063/1.2795081;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 91
- Journal Issue
- 14
- Journal Page Range
- p. 141921-141921.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39035857
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CHEMICAL ANALYSIS; CHLORINE; DOPED MATERIALS; GALLIUM ARSENIDES; NANOSTRUCTURES; RESIDUAL STRESSES; SEMICONDUCTOR MATERIALS; SPECTROSCOPY; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RADIATION; X-RAY DIFFRACTION; ZINC SELENIDES
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CHALCOGENIDES; COHERENT SCATTERING; DIFFRACTION; ELECTROMAGNETIC RADIATION; ELECTRON MICROSCOPY; ELEMENTS; FILMS; GALLIUM COMPOUNDS; HALOGENS; IONIZING RADIATIONS; MATERIALS; MICROSCOPY; NONMETALS; PNICTIDES; RADIATIONS; SCATTERING; SELENIDES; SELENIUM COMPOUNDS; STRESSES; ZINC COMPOUNDS
Optional Information
- Notes
- (c) 2007 American Institute of Physics