Published 1988 | Version v1
Book

Growth mechanism of Cr/sub 2/O/sub 3/ scales on Cr and Cr implanted with Y

  • 1. H. H. Uhlig Corrosion Lab., MIT, Cambridge, MA (USA)

Description

The influence of implanted Y on the mechanism of growth of Cr/sub 2/O/sub 3/ on pure Cr has been determined experimentally. Specimens of pure Cr and Cr implanted with 2x10/sup 16/ Y ions/cm/sup 2/ were oxidized sequentially in /sup 16/O/sub 2/ and /sup 18/O/sub 2/ at 9000C after which SIMS sputter-depth profiles for various polyatomic species were measured. Implantation with Y caused a change in the mechanism of growth of Cr/sub 2/O/sub 3/ from cation to predominantly anion diffusion. The latter change is associated with segregation of Y ions to oxide grain boundaries, which influences the relative grain boundary fluxes of cations and anions

Additional details

Publishing Information

Publisher
The Electrochemical Society.
Imprint Place
Pennington, NJ (USA)
Imprint Title
High temperature materials chemistry - IV. Volume 88-5
Journal Page Range
p. 268-277.

Conference

Title
4. symposium on high-temperature materials chemistry.
Dates
18-23 Oct 1987.
Place
Honolulu, HI (USA).