Published 1993
| Version v1
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Radiation resistance of GaAs structures with built-in π-ν junction
- 1. Institut Fiziki Vysokikh Ehnergij, Protvino (Russian Federation)
Description
The results of studying GaAs samples with build-in π-ν-junction as the base for the construction of the radiation resistant coordinate sensitive detectors are presented. The GaAs samples have been exposed to the beam of the IHEP linear proton accelerator, using Al target for neutron production. The 4-characteristics of GaAs samples have been analyzed to search for the change of its properties. The study of the radiation resistance of the GaAs samples has shown that their main characteristics (charge collection efficiency, signal/noise ratio) degrade less than 20% at the integral neutron fluence of 1.2 x 1015 cm-2. 10 refs., 12 figs., 2 tabs
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Additional details
Additional titles
- Original title (Russian)
- Радиационная стойкость GaAs-структур со встроенным p-n-переходом
Publishing Information
- Imprint Pagination
- 14 p.
- Report number
- IFVE-ONF--93-95
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 26047758
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- CRYSTAL DEFECTS; EFFICIENCY; ELECTRIC CONDUCTIVITY; GALLIUM ARSENIDES; MEV RANGE 10-100; NEUTRON FLUX; P-N JUNCTIONS; PHYSICAL RADIATION EFFECTS; POSITION SENSITIVE DETECTORS; SIGNAL-TO-NOISE RATIO
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ENERGY RANGE; GALLIUM COMPOUNDS; MEASURING INSTRUMENTS; MEV RANGE; PHYSICAL PROPERTIES; PNICTIDES; RADIATION DETECTORS; RADIATION EFFECTS; RADIATION FLUX; SEMICONDUCTOR JUNCTIONS