High-voltage LDIMOSFETs on HPSI 4H-SiC substrate with dual field plates

High-voltage lateral double-implanted metal-oxide-semiconductor field-effect transistor on high-purity semi-insulating 4H-SiC substrate with dual field-plates on both gate and drain was experimentally demonstrated and analyzed by a simulation method. E-field crowding under gate and drain was successfully suppressed by the optimized dual field-plates so that high breakdown voltage of 1.6 kV was achieved at L _drift = 20 μm. Also, we obtained a low R _on,sp (specific on-resistance) of 30 mΩ cm² at L _drift = 20 μm by shrinking the channel length and controlling doping concentration of a drift region. (paper)