Effects of laser field and electric field on impurity states in zinc-blende GaN/AlGaN quantum well

Based on the effective-mass approximation, the competition effects between the laser field and applied electric field on impurity states have been investigated variationally in the ZB GaN/AlGaN quantum well (QW). Numerical results show that for any laser field, the electric field makes the donor binding energy present asymmetric distribution with respect to the center of the QW. Moreover, when the laser field is weak, the electric field effects are obvious on the donor binding energy; however, the electric field effects are insensitive to the variation of donor binding energy in the ZB GaN/AlGaN QW with strong laser field. -- Highlights: → The electric field makes the donor binding energy present asymmetric distribution with respect to the center of the GaN/AlGaN QW. → When laser field is weak, the electric field effects are obvious on the donor binding energy. → When laser field is strong, the electric field effects are insensitive to the variation of donor binding energy.