Published May 15, 2008 | Version v1
Journal article

Synthesis and characteristics of nanocrystalline Co/N thin film containing Co4N phase

  • 1. School of Physics, Beihua University, Jilin, 132021 (China)
  • 2. Department of Materials Science, Key Laboratory of Automobile Materials of MOE, Jilin University, Changchun, 130012 (China)
  • 3. State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University, Changchun, 130012 (China)

Description

Nanocrystalline Co/N thin film containing Co4N phase has been deposited on Si (1 1 1) substrate by direct current magnetron sputtering in 10% N2/N2 + Ar discharge. The composition, structure and magnetic properties were examined by X-ray photoelectron spectroscopy, X-ray diffraction (XRD), transmission electron microscopy (TEM) and superconducting quantum interference device. XRD and TEM investigations showed that the grain size of nanocrystalline Co4N was in the range 10-25 nm (with the error of ±0.2 nm). Magnetic analysis indicated that the synthesized Co/N thin films had good in-plane anisotropy. The value of Hc with the domination orientation (1 1 1) was about 97 Oe. The saturation magnetization was estimated to be 103.9 ± 6.1 emu/g, which was larger than the value of 46.5 emu/g firstly reported by Oda et al

Availability note (English)

Available from http://dx.doi.org/10.1016/j.mseb.2008.03.001

Additional details

Identifiers

DOI
10.1016/j.mseb.2008.03.001;
PII
S0921-5107(08)00109-8;

Publishing Information

Journal Title
Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
Journal Volume
150
Journal Issue
2
Journal Page Range
p. 121-124
ISSN
0921-5107
CODEN
MSBTEK

Optional Information

Copyright
Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.