Investigation of the current transfer mechanism in n-GaAs-p-(GaAs)_1-x-y(Ge₂)_x(ZnSe)_y heterostructures

It is found that the direct branch of I - V characteristic of the n-GaAs-p-(GaAs)_1-x-y(Ge₂)_x(ZnSe)_y heterostructures has the site of sublinear current growth with the voltage of the type V=V_0exp(Jad). The concentrations of deep impurities responsible for the appearance of the sublinear site of I - V characteristic are evaluated. The experimental results are explained on the basis of the effect of injection depletion theory. It is shown that the mobility of the main carriers decreases and that the mobility of the non-main carriers increases with increasing temperature. (author)