Published 1996 | Version v1
Miscellaneous Open

Peculiarities of GaAs infrared spectra change under irradiation influence

  • 1. Natsional'nyj Nauchnyj Tsentr, Kharkov (Ukraine). Khar'kovskij Fiziko-Tekhnicheskij Inst.

Description

Changes of GaAs optical properties in infrared spectral range after irradiation with electrons, protons and helium ions at room temperature were investigated. It was established that radiation defects appear mostly in the energy range 1,2 - 1,5 eV. Optical properties in GaAs crystals irradiated by electrons and protons are restored after annealing at 150 degree C during 30 minutes. Annealing of samples irradiated by He+ ions at 300 degree C does not restore their initial structure

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Part of:
Physics of radiation damage and radiation materials technology

Additional details

Additional titles

Original title (Russian)
Особенности изменения IK-спектров арсенида галлия под влиянием облучения

Publishing Information

Imprint Title
Physics of radiation damage and radiation materials technology
Imprint Pagination
112 p.
Journal Volume
1
Journal Issue
64
Series
Voprosy atomnoj nauki i tekhniki. Fizika radiatsionnykh povrezhdenij i radiatsionnoe materialovedenie.
Journal Page Range
p. 51-53.
ISSN
0134-5400
Report number
INIS-UA--031

Optional Information

Notes
Imprint:Fizika radiatsionnykh povrezhdenij i radiatsionnoe materialovedenie.