Published 1995 | Version v1
Miscellaneous Open

Stopping power of He ions in the <100> axial channel of Si crystals measured between 380 keV and 4 MeV

Creators

  • 1. Instituto de Fisica, UFRGS, Porto Alegre, RS (Brazil)
  • 2. Max-Planck-Institut fuer Kernphysik, Heidelberg (Germany)

Description

Short communication

Files

28080371.pdf

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Part of:
Ninth international conference on ion beam modification of materials. Book of abstracts

Additional details

Publishing Information

Publisher
Accademic Press.
Imprint Title
Ninth international conference on ion beam modification of materials. Book of abstracts
Imprint Pagination
452 p.
Journal Page Range
p. 4008.
Report number
INIS-AU--0004

Conference

Title
9. international conference on ion beam modification of materials.
Acronym
IBMM'95
Dates
5-10 Feb 1995.
Place
Canberra (Australia).

INIS

Country of Publication
Australia
Country of Input or Organization
Australia
INIS RN
28080371
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference, No Abstract
Descriptors DEI
CHANNELING; DEPTH; ENERGY DEPENDENCE; ENERGY LOSSES; HELIUM IONS; ION IMPLANTATION; KEV RANGE 100-1000; MEV RANGE 01-10; SILICON; STOPPING POWER; STRUCTURAL CHEMICAL ANALYSIS
Descriptors DEC
CHARGED PARTICLES; DIMENSIONS; ELEMENTS; ENERGY RANGE; IONS; KEV RANGE; MEV RANGE; SEMIMETALS

Optional Information