The influence of an MgO nanolayer on the planar Hall effect in NiFe films
Creators
- 1. Department of Electrical Engineering, University of California, Los Angeles, California 90095 (United States)
- 2. Department of Material Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083 (China)
- 3. Department of Physics, Inner Mongolia University, Hohhot 010021 (China)
Description
The Planar Hall Effect (PHE) in NiFe films was studied using MgO as the buffer and capping layer to reduce the shunt effect. The thermal annealing was found to be effective in increasing the sensitivity. The sensitivity of the magnetic field reached as high as 865 V/AT in a MgO (3 nm)/NiFe (5 nm)/MgO(3 nm)/Ta(3 nm) structure after annealing at 500 °C for 2 h, which is close to the sensitivity of semiconductor Hall Effect (HE) sensors. X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) were used to study the sample. The results show that the top crystallization of MgO and NiFe (111) texture were improved by proper annealing. The smooth and clear bottom MgO/NiFe and top NiFe/MgO interface is evident from our data. In addition, the shunt current of Ta was decreased. These combined factors facilitate the improvement of the sensitivity of the magnetic field
Additional details
Identifiers
- DOI
- 10.1063/1.4916336;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 117
- Journal Issue
- 12
- Journal Page Range
- p. 123908-123908.5
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46105034
- Subject category
- S36: MATERIALS SCIENCE; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ANNEALING; CRYSTALLIZATION; ELECTRIC CURRENTS; HALL EFFECT; INTERFACES; INTERMETALLIC COMPOUNDS; IRON; LAYERS; MAGNESIUM OXIDES; MAGNETIC FIELDS; NICKEL; SEMICONDUCTOR MATERIALS; SENSITIVITY; SENSORS; TANTALUM; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; ALLOYS; CHALCOGENIDES; COHERENT SCATTERING; CURRENTS; DIFFRACTION; ELECTRON MICROSCOPY; ELECTRON SPECTROSCOPY; ELEMENTS; FILMS; HEAT TREATMENTS; MAGNESIUM COMPOUNDS; MATERIALS; METALS; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; PHASE TRANSFORMATIONS; PHOTOELECTRON SPECTROSCOPY; REFRACTORY METALS; SCATTERING; SPECTROSCOPY; TRANSITION ELEMENTS
Optional Information
- Notes
- (c) 2015 AIP Publishing LLC