Published May 5, 2004 | Version v1
Journal article Metadata-only

Contribution of numerical simulation to silicon carbide bulk growth and epitaxy

Creators

  • 1. LTPCM-INPG-CNRS, 1130 rue de la Piscine, BP 75, 38402 Saint Martin D'Heres (France)
  • 2. CEA/DRT/LETI-CEA, 38054 Grenoble Cedex 9 (France)
  • 3. LMGP-INPG-CNRS, BP 46, 38402 Saint Martin D'Heres (France)

Description

High temperature epitaxial processes for SiC bulk and thin films by physical vapour transport and chemical vapour deposition are reviewed from an academic point of view using heat and mass transfer modelling and simulation. The objective is to show that this modelling approach could provide information on fabrication and characterization for the improvement of the knowledge of the growth history. Recent results of our integrated research programme on SiC, taking into account the fabrication, process modelling and characterization, will be presented

Availability note (English)

Available online at http://stacks.iop.org/0953-8984/16/S1579/cm4_17_009.pdf or at the Web site for the Journal of Physics. Condensed Matter (ISSN 1361-648X) http://www.iop.org/

Additional details

Identifiers

URL
http://stacks.iop.org/0953-8984/16/S1579/cm4_17_009.pdf; http://www.iop.org/;
DOI
10.1088/0953-8984/16/17/009;
PII
S0953-8984(04)65091-0;

Publishing Information

Journal Title
Journal of Physics. Condensed Matter
Journal Volume
16
Journal Issue
17
Journal Page Range
p. S1579-S1595
ISSN
0953-8984
CODEN
JCOMEL

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
36000513
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
Descriptors DEI
CHEMICAL VAPOR DEPOSITION; COMPUTERIZED SIMULATION; CRYSTAL GROWTH; EPITAXY; HEAT TRANSFER; MASS TRANSFER; PHYSICAL VAPOR DEPOSITION; SILICON CARBIDES; THIN FILMS
Descriptors DEC
CARBIDES; CARBON COMPOUNDS; CHEMICAL COATING; CRYSTAL GROWTH METHODS; DEPOSITION; ENERGY TRANSFER; FILMS; SILICON COMPOUNDS; SIMULATION; SURFACE COATING